Symmetrical modeling of GaN HEMTS
Paper in proceedings, 2014

This paper presents a symmetrical small signal model for GaN HEMTs valid for both positive and negative Vds. The model takes advantage of the intrinsic symmetry of the devices typically used for switches. The parameters of the model are extracted using a new symmetrical optimization based extraction method, optimizing simultaneously for both positive and negative drain-source bias points. This ensures a symmetrical small signal model with lower modeling error. The small signal model can be further used to simplify the development of a large-signal model. The small signal model is validated with measured S- parameters of a commercial GaN HEMT.

Semiconductor device modeling

Parameters extraction

Gallium Nitride

Modeling

HEMTs

Author

Ankur Prasad

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Christer Andersson

Mitsubishi Electric Corporation

Klas Yhland

GigaHertz Centre

SP Sveriges Tekniska Forskningsinstitut AB

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

1550-8781 (ISSN)

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/CSICS.2014.6978581

ISBN

978-147993622-9

More information

Latest update

11/29/2018