Experimental results versus numerical simulations of In/Cu intermetallic compounds growth
Paper in proceeding, 2014

Indium is often used as a solder material which also plays a role of thermal interface e.g. in power LED systems. Indium and copper forms the intermetallic compounds. The growth rate constant at 400 K between copper and indium by the molecular dynamics simulations, as well as, experimentally was investigated. The results shown that the growth of the intermetallic compound in both cases follows the parabolic low, which indicates that the growth was mainly controlled by volume diffusion.

Author

T. Fałat

Wrocław University of Science and Technology

B.T. Płatek

Wrocław University of Science and Technology

P.K. Matkowski

Wrocław University of Science and Technology

J. Felba

Wrocław University of Science and Technology

Carl Zandén

Chalmers, Applied Physics, Electronics Material and Systems

L. Ye

SHT Smart High-Tech

Johan Liu

Chalmers, Applied Physics, Electronics Material and Systems

Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014, Marina Bay Sands, Singapore, 3-5 December 2014

797-800
978-147996994-4 (ISBN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/EPTC.2014.7028372

ISBN

978-147996994-4

More information

Latest update

6/24/2019