Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface
Paper in proceeding, 2013

We investigate the strong passivation of shallow interface traps located near the SiC conduction band after enhanced oxidation of Si-face 4H-SiC in the presence of sodium. We find that removing the sodium ions present at the SiO2/SiC interface since oxidation by way of bias stress or annealing does not lead to a significant increase in the density of interface traps. The presence of sodium ions at the SiO2/SiC interface is therefore not responsible for the passivation of such interface traps in oxides formed by sodium enhanced oxidation.

TDRC

Sodium enhanced oxidation

MOS

Interface states

Author

P.G. Hermannsson

University of Iceland

Fredrik Allerstam

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

S. Hauksson

University of Iceland

E. O. Sveinbjornsson

University of Iceland

Materials Science Forum

0255-5476 (ISSN)

Vol. 740-742 749-752

9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
St. Petersburg, Russia,

Subject Categories

Materials Engineering

DOI

10.4028/www.scientific.net/MSF.740-742.749

More information

Latest update

7/19/2021