Post-growth annealing of (Ga,Mn)As under Sb capping
Paper in proceedings, 2012

(Ga,Mn)As is a model diluted ferromagnet system in which the atomic spins of Mn ions are ferromagnetically arranged due to the exchange interaction with valence band holes. An important tecchnological concern regarding this system has been approaches that might result in reduction of the density of Mn interstitial and increase in the content of Mn in order to make the system practically feasible. To accomplish the objective we report the results of our recent synchrotron radiation based spectroscopic investigations concening annealing induced modification of as-grown (Ga,Mn)As layers covered with Sb capping.

Synchrotron radiation

Ga Mn As

Annealing induced modifications

Author

Intikhab Ulfat

Chalmers, Applied Physics, Solid State Physics

Johan Adell

Chalmers, Applied Physics, Solid State Physics

P. Pal

National Physical Laboratory India

J. Sadowski

Lund University

Lars Ilver

Chalmers, Applied Physics, Solid State Physics

Janusz Kanski

Chalmers, Applied Physics, Solid State Physics

Applied Mechanics and Materials

1660-9336 (ISSN)

Vol. 243-246 243-246

Subject Categories

Condensed Matter Physics

DOI

10.4028/www.scientific.net/AMM.229-231.243

ISBN

9783037855102

More information

Latest update

3/2/2018 9