Verification of electron doping in single-layer graphene due to H-2 exposure with thermoelectric power
Journal article, 2015

We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H-2 molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.


S. J. Hong

Seoul National University

M. Park

Seoul National University

H. J. Kang

Seoul National University

M. Lee

Seoul National University

D. Soler-Delgado

Seoul National University

D. S. Shin

Incheon National University

Kyung Ho Kim

Seoul National University

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

D. H. Jeong

Seoul National University

YungWoo Park

Seoul National University

B. H. Kim

Incheon National University

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 106 14 142110

Subject Categories

Physical Sciences



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