Defect/oxygen assisted direct write technique for nanopatterning graphene
Journal article, 2015

High resolution nanopatterning of graphene enables manipulation of electronic, optical and sensing properties of graphene. In this work we present a straightforward technique that does not require any lithographic mask to etch nanopatterns into graphene. The technique relies on the damaged graphene to be etched selectively in an oxygen rich environment with respect to non-damaged graphene. Sub-40 nm features were etched into graphene by selectively exposing it to a 100 keV electron beam and then etching the damaged areas away in a conventional oven. Raman spectroscopy was used to evaluate the extent of damage induced by the electron beam as well as the effects of the selective oxidative etching on the remaining graphene.

Author

A. Cagliani

Technical University of Denmark (DTU)

Niclas Lindvall

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Mbbs Larsen

Technical University of Denmark (DTU)

D. M. A. Mackenzie

Technical University of Denmark (DTU)

B. S. Jessen

Technical University of Denmark (DTU)

T. J. Booth

Technical University of Denmark (DTU)

P. Boggild

Technical University of Denmark (DTU)

Nanoscale

2040-3364 (ISSN)

Vol. 7 14 6271-6277

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

European Commission (FP7), 2013-10-01 -- 2016-03-31.

Driving Forces

Sustainable development

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Nano Technology

Infrastructure

Nanofabrication Laboratory

DOI

10.1039/c4nr07585d

More information

Latest update

2/28/2018