The potential for sensitivity enhancement by the thermoelectric effect in carbon-nanotube and graphene Tera-FETs
Paper in proceeding, 2015
We report on terahertz (THz) measurements with graphene field-effect transistors with integrated antennas (Tera-FETs) lay special emphasis on thermoelectric contributions to the detected THz photoresponse. Graphene Tera-FETs with integrated broad-band bow-tie antennas were fabricated in a CVD-based growth process and were successfully applied for detection at 600 GHz with optical NEPs down to 515 pW/Hz^1/2. While rectification of THz radiation by (distributed) resistive mixing of charge-density waves induced in the gated transistor channel region is well known, significant additional contributions to the detected signal have experimentally been observed and hot-carrier thermoelectric effects have been identified as a possible origin of these signals. We also observe similar signal contributions in carbonnanotube transistors.
CVD graphene
direct terahertz detection
antenna-integrated detectors
Graphene field effect transistors
Author
Maris Bauer
Goethe University Frankfurt
MICHAEL ANDERSSON
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Audrey Zak
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
P. Sakalas
Technische Universität Dresden
Dovilė Čibiraitė
Vilnius University
Alvydas Lisauskas
Goethe University Frankfurt
Vilnius University
M. Schroter
Technische Universität Dresden
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Hartmut Roskos
Goethe University Frankfurt
Journal of Physics: Conference Series
17426588 (ISSN) 17426596 (eISSN)
Vol. 647 1 UNSP 012004- 012004Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Nano Technology
Other Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1088/1742-6596/647/1/012004