Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
Journal article, 2015

The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.

InPBi

eep level

hermal tability

hermal annealing

hotoluminescence

ilute bismides

Author

X. Y. Wu

Chinese Academy of Sciences

K. Wang

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

P. Wang

Chinese Academy of Sciences

Y. Li

Chinese Academy of Sciences

Yuxin Song

Chinese Academy of Sciences

Yi Gu

Chinese Academy of Sciences

L. Yue

Chinese Academy of Sciences

H. Xu

Chinese Academy of Sciences

Z. Zhang

Chinese Academy of Sciences

J. Cui

Chinese Academy of Sciences

Q. Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 30 9

Subject Categories

Atom and Molecular Physics and Optics

DOI

10.1088/0268-1242/30/9/094014

More information

Latest update

5/23/2018