A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator
Paper in proceedings, 2006

This paper describes the design and measurement of a 2 GHz oscillator based on a Solidly Mounted Thin Film Bulk Acoustic wave Resonator (SM TFBAR). The circuitry is patterned on an alumina substrate on which the transistors and capacitors are soldered. The SM TFBAR chip is integrated by means of wirebonding. The measured oscillator centre frequency is about 2.038 GHz with an output power of 0 dBm. © 2006 IEEE.

Author

Martin Norling

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Johannes Enlund

Uppsala University

Spartak Gevorgian

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Ilia Katardjiev

Uppsala University

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Vol. 1 1 1813-1816 4015307

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/MWSYM.2006.249747

ISBN

0-7803-7542-5

More information

Latest update

3/28/2018