A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator
Paper i proceeding, 2006
This paper describes the design and measurement of a 2 GHz oscillator based on a Solidly Mounted Thin Film Bulk Acoustic wave Resonator (SM TFBAR). The circuitry is patterned on an alumina substrate on which the transistors and capacitors are soldered. The SM TFBAR chip is integrated by means of wirebonding. The measured oscillator centre frequency is about 2.038 GHz with an output power of 0 dBm. © 2006 IEEE.
Författare
Martin Norling
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Johannes Enlund
Uppsala universitet
Spartak Gevorgian
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågs- och terahertzteknologi
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Ilia Katardjiev
Uppsala universitet
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
Vol. 1 1 1813-1816 40153070-7803-7542-5 (ISBN)
Ämneskategorier
Annan elektroteknik och elektronik
DOI
10.1109/MWSYM.2006.249747
ISBN
0-7803-7542-5