Symmetry based nonlinear model for GaN HEMTs
Paper in proceedings, 2015

This paper presents a new nonlinear transistor model based on a symmetrical small-signal model for GaN HEMTs. The intrinsic symmetry reflected into the small signal equivalent circuit is used to build a new model to describe the nonlinear behavior of the device. The model consists of a new nonlinear charge expression with only 6 parameters, while the nonlinear current expression is extended from an existing model to enable validity in both the positive and negative Vds region. Therefore, it can be used for transistors in switches, resistive mixers as well as amplifiers. The model is validated with both small-signal and nonlinear measurements showing good agreements.

Author

Ankur Prasad

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Mattias Thorsell

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Klas Yhland

SP Sveriges Tekniska Forskningsinstitut AB

GigaHertz Centre

Christian Fager

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

10th European Microwave Integrated Circuits Conference (EuMIC), 2015

85-88

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/EuMIC.2015.7345074

ISBN

978-287487040-8

More information

Latest update

11/22/2018