A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology
Paper in proceedings, 2015

A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).

Stacked

PA

GaAs

MMIC

V-band

FET

Power Amplifier

HEMT

mm-wave

Author

Marcus Gavell

Gotmic AB

Iltcho Angelov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Ferndahl

Gotmic AB

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2015 IEEE MTT-S International Microwave Symposium, IMS 2015

7166754

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/MWSYM.2015.7166754

ISBN

978-1-4799-8275-2

More information

Latest update

2/28/2018