An Accurate Empirical Model Based on Volterra Series for FET Power Detectors
Journal article, 2016

An empirical model for field-effect transistor (FET) based power detectors is presented. The electrical model constitutes a Volterra analysis based on a Taylor series expansion of the drain current together with a linear embedding small-signal circuit. It is fully extracted from S-parameters and IV curves. The final result are closed-form expressions for the frequency dependence of the noise equivalent power (NEP) in terms of the FET intrinsic capacitances and parasitic resistances. Excellent model agreement to measured NEP of coplanar access graphene FETs with varying channel dimensions up to 67 GHz is obtained. The influence of gate length on responsivity and NEP is theoretically and experimentally studied.

microwave detectors

field-effect transistors (FETs)

power detectors

graphene

terahertz detectors

Analytical model

Volterra

Author

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 64 5 1431-1441 7442181

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/TMTT.2016.2532326

More information

Created

10/7/2017