Fabrication of graphene quantum hall resistance standard in a cryogen-Table-Top system
Paper in proceedings, 2016

We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively easy to use and compact cryogen-free system operating at a temperature of around 3.8 K and magnetic field below 5 T. This advance in technology is due to the unique properties of epitaxial graphene on silicon carbide (SiC) which lifts the stringent requirements for quantum hall effect seen in conventional semiconductors. This paper presents the processes involved in fabrication and characterization of metrologically viable epitaxial graphene samples.

measurement standards

Graphene

quantum hall effect

microfabrication

Epitaxial layers

Author

Hans He

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Tjbm Janssen

National Physical Laboratory (NPL)

S. Rozhko

National Physical Laboratory (NPL)

A.Y. Tzalenchuk

Royal Holloway University of London

National Physical Laboratory (NPL)

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

R. Yakimova

Linköping University

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

2016 Conference on Precision Electromagnetic Measurements, CPEM 2016; The Westin OttawaOttawa; Canada; 10-15 July 2016

Art no 7540516-

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/CPEM.2016.7540516

ISBN

978-1-4673-9134-4

More information

Latest update

5/29/2018