The effects of impurity redistribution of the subthreshold leakage current in CMOS n-channel transistors
Journal article, 1976

A study of subthreshold leakage current in n-channel transistors on low threshold voltage CMOS circuits has been made. Redistribution of impurities at the silicon surface during thermal oxidation is shown to be the main cause of excess subthreshold leakage current. Processing techniques to minimize this leakage have been developed.


Kjell Jeppson

Department of Microelectronics and Nanoscience

Department of Electron Physics III (3)

James Gates

Solid-State Electronics

0038-1101 (ISSN)

Vol. 19 1 83-85

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering



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