Extraction of series-resistance-independent MOS transistor model parameters
Journal article, 1992

It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.

Circuit simulation

Data mining

Feedback

Resistors

Electron mobility

Threshold voltage

Transistors

Solid state circuits

SPICE

MOSFETs

Author

Peter R. Karlsson

Department of Solid State Electronics

Kjell Jeppson

Department of Microelectronics and Nanoscience

Department of Solid State Electronics

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 13 11 581-583

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017