Extraction of series-resistance-independent MOS transistor model parameters
Journal article, 1992
It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.
Circuit simulation
Data mining
Feedback
Resistors
Electron mobility
Threshold voltage
Transistors
Solid state circuits
SPICE
MOSFETs
Author
Peter R. Karlsson
Department of Solid State Electronics
Kjell Jeppson
Department of Microelectronics and Nanoscience
Department of Solid State Electronics
IEEE Electron Device Letters
0741-3106 (ISSN)
Vol. 13 11 581-583Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering