A fast method of parameter extraction for MOS transistors
Paper in proceedings, 1990

A fast method of parameter extraction using a limited number of data points is developed for the SPICE level 3 MOS transistor model. Analytical expressions or numerical equations that converge fast are used to calculate the parameters and all interactions between parameters are taken into account. Proper selection of data points ensures physically reasonable values for most extracted parameters.

Parameter extraction

SPICE

Threshold voltage

Solid modeling

Differential equations

Data mining

Algorithm design and analysis

Intrusion detection

MOSFETs

Transistors

Author

Peter R. Karlsson

Department of Solid State Electronics

Kjell Jeppson

Department of Microelectronics and Nanoscience

Department of Solid State Electronics

European Solid State Device Research Conference ESSDERC

Vol. 1990 10-13 Sept. 1990

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

0-7503-0065-5

More information

Created

10/7/2017