A direct method to extract effective geometries and series resistances of MOS transistors
Paper in proceedings, 1994

A new direct method for rapid characterization of MOS transistor effective geometries and series resistances is presented. The method only requires devices of four different sizes. Also presented is a new linear regression technique that offers a natural extension of the method to any arbitrary number of devices. Finally, the channel width dependence of the mobility reduction factor is shown to be explained by the electrical broadening of the channel.

Circuit synthesis

Optimization methods

Electric resistance

Linear regression

Condition monitoring

Solid state circuits

SPICE

Geometry

Threshold voltage

MOSFETs

Author

Peter R. Karlsson

Department of Solid State Electronics

Kjell Jeppson

Department of Solid State Electronics

Department of Microelectronics and Nanoscience

Proceedings of the International Conference on Microelectronic Test Structures ICMTS

Vol. 1994 22-25 March 1994

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

0-7803-1757-2

More information

Created

10/7/2017