An analytical strategy for fast extraction of MOS transistor DC parameters applied to the SPICE MOS3 and BSIM models
Paper in proceeding, 1992

A general strategy for direct extraction of MOS transistor DC parameters using only a small number of data points has been developed. This extraction algorithm has been implemented for two semi-empirical SPICE MOS transistor models, MOS3 and BSIM. Fifteen data points were used to determine the ten MOS3 transistor parameters while 25 data points were used to determine the 20 BSIM parameters. It was possible to obtain good agreement between measured and simulated characteristics. It was also shown that series resistance independent parameters can be extracted with a direct parameter extraction algorithm.

Production control

MOSFETs

SPICE

Threshold voltage

Parameter extraction

Data mining

Solid state circuits

Noise measurement

Geometry

Equations

Author

Peter R. Karlsson

Department of Solid State Electronics

Kjell Jeppson

Department of Solid State Electronics

Department of Microelectronics and Nanoscience

Proceedings of the International Conference on Microelectronic Test Structures ICMTS

Vol. 1992 16-19 March 1992
0-7803-0535-3 (ISBN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

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