A direct extraction algorithm for a submicron MOS transistor model
Paper in proceeding, 1993
A four-point technique for direct extraction of the linear region model parameters of submicron transistors is presented. The choice of data points for minimizing sensitivity to measurement noise is discussed. For a submicron transistor model where a second order mobility reduction factor is included to model the quadratic gate voltage dependence, direct extraction of the four linear-region parameters is possible using only four data points. This means that efficient parameter extraction is facilitated and that this type of submicron transistor model can be used in production control.
Transistors
Noise measurement
Geometry
Solid state circuits
Sensitivity analysis
Circuit noise
Solid modeling
Threshold voltage
Data mining
MOSFETs
Author
Peter R. Karlsson
Department of Solid State Electronics
Kjell Jeppson
Department of Microelectronics and Nanoscience
Department of Solid State Electronics
Proceedings of the International Conference on Microelectronic Test Structures ICMTS
Vol. 1993 22-25 March 1993
0-7803-0857-3 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering