Optical bandgap engineering in nonlinear silicon nitride waveguides
Journal article, 2017

Silicon nitride is a well-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of nonlinear multi-photon absorption in the erbium lightwave communications band has enabled various nonlinear optic applications in the past decade. Silicon nitride is a dielectric material whose optical and mechanical properties strongly depend on the deposition conditions. In particular, the optical bandgap can be modified with the gas flow ratio during low-pressure chemical vapor deposition (LPCVD). Here we show that this parameter can be controlled in a highly reproducible manner, providing an approach to synthesize the nonlinear Kerr coefficient of the material. This holistic empirical study provides relevant guidelines to optimize the properties of LPCVD silicon nitride waveguides for nonlinear optics applications that rely on the Kerr effect.

Deposition

Resonators

Frequency Combs

Microresonator

2-Photon Absorption

Wavelength

Rich Nitride

Conversion

Photonics

Supercontinuum Generation

CMOS-Compatible Platform

Author

Clemens Krückel

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Attila Fülöp

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Zhichao Ye

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Peter Andrekson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Victor Torres Company

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Optics Express

1094-4087 (ISSN)

Vol. 25 13 15370-15380

Subject Categories

Atom and Molecular Physics and Optics

DOI

10.1364/OE.25.015370

More information

Created

10/8/2017