Design and Analysis of a Wideband Gilbert Cell VGA in 0.25 um InP DHBT Technology With DC-40-GHz Frequency Response
Journal article, 2017

A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- μ m InP double heterojunction bipolar transistor technology with fT/f max of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single -7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 mm^2. We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias

Gb/s

variable gain amplifier (VGA)

InP

radio frequency integrated circuit (RFIC)

gain bandwidth product (GBP)

Double heterojunction bipolar transistor (DHBT)

Author

Marcus Gavell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Sten Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Iltcho Angelov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Ferndahl

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 65 10 3962-3974

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Computer and Information Science

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2017.2693146

More information

Created

10/8/2017