Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al
Paper in proceedings, 2017

We report on a very low density (<5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors. The aluminum oxide (Al2O3) is grown by repeated deposition and subsequent low temperature (200 °C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al2O3. It is observed that the density of NITs is significantly lower in the hot plate Al2O3 samples than in samples with Al2O3 grown by atomic layer deposition (ALD) at 300 °C and in reference samples with thermally grown silicon dioxide grown in O2 or N2O ambient. © 2017 Trans Tech Publications, Switzerland.

Near-interface traps

Interface states

Aluminum oxide

Gate dielectrics

Author

Rabia Y. Khosa

University of Iceland

Einar Sveinbjӧrnsson

University of Iceland

Linköping University

Michael Winters

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

J. Hassan

Linköping University

Robin Karhu

Linköping University

Erik Janzén

Linköping University

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Materials Science Forum

0255-5476 (ISSN)

Vol. 897 MSF 135-138

Subject Categories

Materials Engineering

DOI

10.4028/www.scientific.net/MSF.897.135

ISBN

978-303571043-4

More information

Latest update

4/20/2018