Analysis of quasi-static assumption in nonlinear finFET model
Paper in proceeding, 2008
The construction and validation of a quasi-static nonlinear microwave model for FinFETs are investigated. A very good agreement between model simulations and measurements is obtained under different DC bias points, input power levels, fundamental frequencies up to 5 GHz, and device geometries. Since the intrinsic part of the FET model is based on the quasi-static approximation, the goal of this work is to analyze in detail the limitations of this assumption by examining the intrinsic admittance parameters versus the frequency.
Author
G. Crupi
University of Messina
A. Caddemi
University of Messina
D. Schreurs
KU Leuven
M. Homayouni
KU Leuven
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
B. Parvais
Interuniversity Micro-Electronics Center at Leuven
2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008
4630229
978-839066628-0 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-839066628-0