[L].	GaN grown on sapphire, Si and GaN substrates by molecular beam epitaxy

Xinju Liu; Thomas Aggerstam; Sebastian Lourdudoss; Thorvald Andersson

[L]. GaN grown on sapphire, Si and GaN substrates by molecular beam epitaxy
Paper in proceeding, 2006

Author

Xinju Liu

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Thomas Aggerstam

Sebastian Lourdudoss

Thorvald Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Proceedings for 30th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe

213-

Subject Categories

Condensed Matter Physics

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Created

10/6/2017

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[L]. GaN grown on sapphire, Si and GaN substrates by molecular beam epitaxy Paper in proceeding, 2006