Vertical high-mobility wrap-gated InAs nanowire transistor
Journal article, 2006

In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.

wrap gate

field-effect transistor (FET) InAs



Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Lars-Erik Wernersson

QuNano AB

Lund University

Linus Fröberg

Lund University

Lars Samuelson

Lund University

QuNano AB

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 27 5 323-325

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering



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