research and development of SiC Static Induction transistor
Conference contribution, 2003

A fabrication process for SiC Static Induction Transistors (SITs) is developed and tested. Simulated and measured results of the device are presented. The complete fabrication process involves only 5 lithography steps, due to the self-aligned process used for mesa, ohmic contacts and gates. This makes the process fast and minimize the risk of process errors. Only optical lithography is used in the process, why dimensions are not optimised. Mesa widths of 2, 3, 4 and 5 ┬Ám are processed. Since the process is scalable, better performance can be expected with smaller widths achieved by the use electron beam lithography. Preliminary results indicate FET operation with a maximum current density of 110 mA/mm.

Author

Kristina Dynefors

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Vincent Desmaris

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Joakim Eriksson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GHz2003 conference, Linköping 2003

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Created

10/8/2017