A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer
Paper in proceeding, 2017

This paper demonstrates a wideband, subharmonic down converting mixer using a commercial 130-nm SiGe-BiCMOS technology. The mixer adopts a frequency doubling LO-stage, a differential switched-transconductance RF-stage, on-chip LO and RF baluns, and two emitter-follower buffer-stages. The measured results exhibit a maximum conversion gain up to 2.6 dB over the frequency range of 100 to 140 GHz with a LO power of 5 dBm. The mixer achieves an input referred 1-dB compression point of −7.2 dBm, with a DC power of 46.3 mW, including 26.7 mW for buffer-stages. It demonstrates also up to 12 GHz 3-dB IF bandwidth, which to the authors' best knowledge, is the highest obtained among active sub-harmonic mixers operating above 100 GHz. The chip occupies 0.4 mm2, including pads.

SiGe MMICs

millimeter-wave

broadband circuits

down-converter

sub-harmonic mixer (SHM)

above 100 GHz

Author

Neda Seyedhosseinzadeh

Abdolreza navabi

Sona Carpenter

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mingquang Bao

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2017 12th European Microwave Integrated Circuits Conference (EuMIC),

Vol. 2017-January
978-2-87487-048-4 (ISBN)

Subject Categories

Telecommunications

Communication Systems

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.23919/EuMIC.2017.8230649

ISBN

978-2-87487-048-4

More information

Latest update

7/12/2024