Thermal noise-limited sensitivity of FET-based terahertz detectors
Paper in proceedings, 2017

Here we present a detailed study on estimation of noise-dependent parameters, such as signal-to-noise ratio (SNR) or noise equivalent power (NEP), of field-effect-transistor based terahertz detectors (TeraFETs). Commonly, these parameters are estimated from a well-known assumption, that detector's performance is limited by the thermal noise of transistor's channel. However, practice shows that the influence of other noise sources or transient effects is considerable. We summarize TeraFET noise measurements performed on different material systems based transistors, such as AlGaN/GaN, AlGaAs/GaAs, silicon CMOS, and monolayer graphene. We have achieved a good agreement between thermal noise and measured data. However, attention has to be paid to gate leakage currents and slow defect charging and discharging effects, which can strongly influence TeraFET's performance estimation.

Author

D. Cibiraite

M Bauer

A. Lisauskas

V. Krozer

H. G. Roskos

A. Rämer

W. Heinrich

S. Pralgauskaite

J. Zdanevicius

J. Matukas

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

2017 International Conference on Noise and Fluctuations, ICNF 2017, Vilnius, Lithuania, 20-23 June 2017

7986008

International Conference on Noise and Fluctuations (ICNF)
Vilnius, Lithuania,

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICNF.2017.7986008

More information

Latest update

5/30/2018