A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications
Paper in proceedings, 2018

A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transceiver operates as an amplifier for transmitting and simultaneously as a fundamental mixer for receiving. In a measured frequency range of 120-160 GHz, a typical output power of 0 dBm is obtained with an input power of +3 dBm. As a fundamental mixer, a conversion gain of -9 dB is obtained at 130 GHz LO, and a noise figure of 19 dB is achieved. The transceiver is successfully demonstrated as a FMCW radar front-end for distance measurement. With a chirp rate of 1.6×1012 Hz/s and a bandwidth of 14.4 GHz, a range resolution of 2.8 cm is demonstrated, and transmission test is shown on different objects.

HBT

130 nm

mixer

SiGe

chirp rate

BiCMOS

range resolution

amplifier

power

radar front-end

conversion gain

noise figure

transmission

transceiver

FMCW

Author

Yu Yan

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Vessen Vassilev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Sten Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN) 1996756X (eISSN)

Vol. 10800 108000I

Millimetre Wave and Terahertz Sensors and Technology XI 2018
Berlin, Germany,

Subject Categories

Telecommunications

Signal Processing

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1117/12.2318791

More information

Latest update

12/7/2018