Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies
Paper in proceeding, 2019
This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71-86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.
Author
Alhassan Aljarosha
Chalmers, Electrical Engineering, Communication, Antennas and Optical Networks
Eindhoven University of Technology
Piyush Kaul
Eindhoven University of Technology
A. Bart Smolders
Eindhoven University of Technology
Marion Matters-Kammerer
Eindhoven University of Technology
Rob Maaskant
Chalmers, Electrical Engineering, Communication, Antennas and Optical Networks
Eindhoven University of Technology
2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings
Vol. July 2019 1081-1082 8888834
978-172810692-2 (ISBN)
2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019
Atlanta, GA, USA,
Atlanta, GA, USA,
Subject Categories
Other Physics Topics
Communication Systems
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/APUSNCURSINRSM.2019.8888834