Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies
Paper i proceeding, 2019
This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71-86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.
Författare
Alhassan Aljarosha
Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk
Technische Universiteit Eindhoven
Piyush Kaul
Technische Universiteit Eindhoven
A. Bart Smolders
Technische Universiteit Eindhoven
Marion Matters-Kammerer
Technische Universiteit Eindhoven
Rob Maaskant
Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk
Technische Universiteit Eindhoven
2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings
Vol. July 2019 1081-1082 8888834
978-172810692-2 (ISBN)
2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019
Atlanta, GA, USA,
Atlanta, GA, USA,
Ämneskategorier
Annan fysik
Kommunikationssystem
Annan elektroteknik och elektronik
DOI
10.1109/APUSNCURSINRSM.2019.8888834