A low phase noise W-band MMIC GaN HEMT oscillator
Paper in proceedings, 2020
This paper presents a fundamental mode W-band MMIC balanced Colpitts oscillator implemented in an advanced 60 nm gallium nitride (GaN) high electron mobility transistor (HEMT) process from OMMIC foundry. The oscillator operates around 85 GHz with measured peak output power of nearly 0 dBm and phase noise at 10 MHz offset of -120 dBc/Hz. To the best authors’ knowledge, the phase noise is state-of-the-art value for W-band monolithic microwave integrated circuit (MMIC) GaN HEMT oscillators.
—oscillator
monolithic microwave integrated circuit (MMIC)
phase noise
gallium nitride (GaN)
millimeter-wave
W-band (75-110 GHz).
HEMT
Author
Thi Ngoc Do Thanh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics
Yu Yan
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics
Dan Kuylenstierna
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics
Asia-Pacific Microwave Conference Proceedings, APMC
115-115
2020 Asia Pacific Microwave Conference
Hongkong, China,
Hongkong, China,
GaN mm-wave Radar Components Embedded (GRACE)
European Commission (EC), 2018-11-01 -- 2020-10-31.
Areas of Advance
Information and Communication Technology
Infrastructure
Kollberg Laboratory
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/APMC47863.2020.9331430