A low phase noise W-band MMIC GaN HEMT oscillator
Paper in proceedings, 2020

This paper presents a fundamental mode W-band MMIC balanced Colpitts oscillator implemented in an advanced 60 nm gallium nitride (GaN) high electron mobility transistor (HEMT) process from OMMIC foundry. The oscillator operates around 85 GHz with measured peak output power of nearly 0 dBm and phase noise at 10 MHz offset of -120 dBc/Hz. To the best authors’ knowledge, the phase noise is state-of-the-art value for W-band monolithic microwave integrated circuit (MMIC) GaN HEMT oscillators.

—oscillator

monolithic microwave integrated circuit (MMIC)

phase noise

gallium nitride (GaN)

millimeter-wave

W-band (75-110 GHz).

HEMT

Author

Thi Ngoc Do Thanh

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Yu Yan

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Dan Kuylenstierna

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Asia-Pacific Microwave Conference Proceedings, APMC

115-115

2020 Asia Pacific Microwave Conference
Hongkong, China,

GaN mm-wave Radar Components Embedded (GRACE)

European Commission (EC), 2018-11-01 -- 2020-10-31.

Areas of Advance

Information and Communication Technology

Infrastructure

Kollberg Laboratory

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/APMC47863.2020.9331430

More information

Latest update

2/25/2021