High-speed, low-noise thermoelectric graphene detectors at terahertz frequencies
Paper in proceeding, 2020

We report room temperature terahertz detection in hBN/graphene/hBN heterostructures, integrated in top-gated field effect transistors. The record combination of high-speed (response time < 1 ns) and high sensitivity (noise equivalent power ~ 100 pWHz-1I2) is enabled by the photo-thermoelectric effect and paves the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspectives for targeting ultrafast applications.

Author

Leonardo Viti

Scuola Normale Superiore di Pisa

Alisson R. Cadore

University of Cambridge

David G. Purdie

University of Cambridge

Jakob E. Muench

University of Cambridge

Xinxin Yang

Scuola Normale Superiore di Pisa

Kenji Watanabe

National Institute for Materials Science (NIMS)

Takashi Taniguchi

National Institute for Materials Science (NIMS)

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Antonio Lombardo

University of Cambridge

Andrea C. Ferrari

University of Cambridge

Miriam S. Vitiello

Scuola Normale Superiore di Pisa

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

21622027 (ISSN) 21622035 (eISSN)

2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Buffalo, NY, USA,

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Nano Technology

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/IRMMW-THz46771.2020.9370662

More information

Latest update

4/27/2021