Disorder is not always bad for charge-to-spin conversion in WTe2
Journal article, 2021

The Wang group at Stanford University demonstrates disordered WTe films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

Author

Marcos Guimarães

University of Groningen

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Matter

25902393 (ISSN) 25902385 (eISSN)

Vol. 4 5 1440-1441

Subject Categories

Materials Chemistry

Other Physics Topics

Condensed Matter Physics

DOI

10.1016/j.matt.2021.04.009

More information

Latest update

5/19/2021