High-speed, low-noise thermoelectric graphene detectors at terahertz frequencies
Paper in proceeding, 2020
We report room temperature terahertz detection in hBN/graphene/hBN heterostructures, integrated in top-gated field effect transistors. The record combination of high-speed (response time < 1 ns) and high sensitivity (noise equivalent power ~ 100 pWHz-1I2) is enabled by the photo-thermoelectric effect and paves the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspectives for targeting ultrafast applications.
Author
Leonardo Viti
Scuola Normale Superiore di Pisa
Alisson R. Cadore
University of Cambridge
David G. Purdie
University of Cambridge
Jakob E. Muench
University of Cambridge
Xinxin Yang
Scuola Normale Superiore di Pisa
Kenji Watanabe
National Institute for Materials Science (NIMS)
Takashi Taniguchi
National Institute for Materials Science (NIMS)
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Antonio Lombardo
University of Cambridge
Andrea C. Ferrari
University of Cambridge
Miriam S. Vitiello
Scuola Normale Superiore di Pisa
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
21622027 (ISSN) 21622035 (eISSN)
Vol. 2020-November 302-302 93706629781728166209 (ISBN)
2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Buffalo, NY, USA,
Buffalo, NY, USA,
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Subject Categories
Nano Technology
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/IRMMW-THZ46771.2020.9370662