Deep-level emissions influenced by O and Zn implantations in ZnO
Journal article, 2005

A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1×1017/cm3 and 5×1019/cm3. The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the VZn is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5×1019/cm3 implantation concentration. The novel emission is tentatively identified as O-antisite OZn.


Qing Xiang Zhao

University of Gothenburg

Peter Klason

University of Gothenburg

Magnus Willander

University of Gothenburg

H. M. Zhong

W. Lu

J. H. Yang

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 87 211912-

Subject Categories

Physical Sciences



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