Characterization of semiconducting glaze by dielectric spectroscopy in frequency domain
Paper in proceeding, 2004
nonlinear voltage dependence
SnO/sub 2/
electrical contacts
semiconducting glaze
glass
polarization relaxation
electrical contacts
chemical analysis
resistivity
dc conductance
frequency domain
IV-VI semiconductors
dielectric spectroscopy
electrical resistivity
chemical analysis
tin oxide particles
dielectric polarisation
4 micron
dielectric relaxation
structural analysis
scanning electron microscopy
glass
low-conductive barrier
dielectric response
10/sup 8/ to 10/sup 9/ ohmm
glassy layer
scanning electron microscopy
circuit model
Author
Heike Ullrich
Department of Electric Power Engineering, High voltage engineering
Stanislaw Gubanski
Department of Electric Power Engineering, High voltage engineering
Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on
123-126
Subject Categories
Materials Engineering
Electrical Engineering, Electronic Engineering, Information Engineering