Cryogenic X-Band Low Noise Amplifiers
Paper in proceedings, 2007

This paper describes a number of cryogenic low noise amplifiers with very low noise for the frequency band 8.4-8.5 GHz. The amplifiers have been designed with different inputs: o standard coaxial o waveguide o coaxial followed by a high directivity 30 dB microstrip coupler At 10 K ambient temperature the three-stage partly InP-based amplifiers have a gain of 33.0+/-0.5 dB and a noise temperature of 5 -7K. The InP transistors used in the amplifiers were processed at Chalmers clean room facility in our own proprietary process.

HEMT

noise temperature

cryogenic low noise amplifier

LNA

InP

Author

Naiara Goia

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Matthew Kelly

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Anna Malmros

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Piotr Starski

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

4th ESA International Workshop on Tracking, Telemetry & Command Systems for Space Applications

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Created

10/7/2017