A comparative study of surface passivation on SiC BJTs with high current gain

H. S. Lee; M. Domeij; C. M. Zetterling; Mikael Östling; Einar Sveinbjörnsson

doi:10.4028/0-87849-442-1.631

A comparative study of surface passivation on SiC BJTs with high current gain
Journal article, 2007

Author

H. S. Lee

Royal Institute of Technology (KTH)

M. Domeij

Royal Institute of Technology (KTH)

C. M. Zetterling

Royal Institute of Technology (KTH)

Mikael Östling

Royal Institute of Technology (KTH)

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Materials Science Forum

0255-5476 (ISSN) 16629752 (eISSN)

Vol. 556-557 631-634

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.4028/0-87849-442-1.631

Publication data connected to DOI

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6/5/2020 6

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