Optimization of 1.3 µm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
Journal article, 2005

Metamorphic growth

Semiconducting III–V materials

Molecular beam epitaxy

Author

Ivar Tångring

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Journal of Crystal Growth

Vol. 281 2-4 220-226

Subject Categories

Materials Engineering

Physical Sciences

More information

Created

10/7/2017

Feedback and support

If you have questions, need help, find a bug or just want to give us feedback you may use this form, or contact us per e-mail research.lib@chalmers.se.

About

Research.chalmers.se contains research information from Chalmers University of Technology, Sweden. It includes information on projects, publications, research funders and collaborations.

More about coverage period and what is publicly available

Privacy and cookies

Accessibility

Citation Style Language
citeproc-js (Frank Bennett)

Links

Chalmers Library
Chalmers Research
Chalmers Student Theses

Chalmers University of Technology

SE-412 96 GOTHENBURG, SWEDEN
PHONE: +46 (0)31-772 10 00
WWW.CHALMERS.SE