Strong 1.3--1.6 µm light emission from metamorphic InGaAs quantum wells on GaAs
Journal article, 2005

Molecular beam epitaxy

Semiconducting III–V materials

Metamorphic growth

Author

Ivar Tångring

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Applied Physics Letters

Vol. 86 171902-

Subject Categories

Materials Engineering

Physical Sciences

More information

Created

10/7/2017

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