Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy
Journal article, 2008
Using a method based on the frequency dependence of capacitance, cross sections for electron capture into energy states at the interlayer/silicon interface have been investigated for HfO2 that is deposited on silicon by reactive sputtering. We find that the capture cross sections are thermally activated and steeply increase with increasing energy depth. Both features can be attributed to the same physical origin, indicating vibronic trap properties, where the capture mechanism is governed by multiphonon processes.
semiconductor-insulator boundaries
elemental semiconductors
vibronic states
phonon-phonon interactions
electron traps
interface states
capacitance
silicon
hafnium compounds
Author
Olof Engström
Chalmers, Applied Physics, Physical Electronics
Bahman Raeissi
Chalmers, Applied Physics, Physical Electronics
Johan Piscator
Chalmers, Applied Physics, Physical Electronics
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 103 10 Art. no. 104101- 104101Subject Categories
Condensed Matter Physics
DOI
10.1063/1.2921795