High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Journal article, 2008

Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.

Gd2O3

Capacitance frequency spectroscopy

High-k

HfO2

MOS

Capture cross section

Author

Bahman Raeissi

Chalmers, Applied Physics, Physical Electronics

Johan Piscator

Chalmers, Applied Physics, Physical Electronics

Olof Engström

Chalmers, Applied Physics, Physical Electronics

S. Hall

University of Liverpool

O. Buiu

University of Liverpool

M.C. Lemme

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

H.D.B. Gottlob

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

P.K. Hurley

Tyndall National Institute at National University of Ireland, Cork

K. Cherkaoui

Tyndall National Institute at National University of Ireland, Cork

H.J. Osten

University of Hanover

Solid-State Electronics

0038-1101 (ISSN)

Vol. 52 9 1274-1279

Subject Categories

Materials Engineering

Other Engineering and Technologies

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/j.sse.2008.04.005

More information

Latest update

3/29/2018