Excess low frequency noise in single-wall carbon nanotube
Journal article, 2006

Low frequency noise measurements have been performed on a single-wall carbon nanotube connected by Ti/Au electrodes. It has been found that the 1/f noise decreases when the measurements are undertaken under vacuum and when the nanotube is partially degassed, showing a correlation between the fluctuation inducing the 1/f noise and the presence of gases. We show that the 1/f noise sources are located at the metal/nanotube contacts. When the device is annealed under vacuum at 450K, some Lorentzian shapes are observable and can be related to nanotube defects or to strongly bound molecules. © World Scientific Publishing Company.

field-effect transistors

1/f noise





S. Soliveres

McMaster University

University of Montpellier

A. Hoffmann

University of Montpellier

F. Pascal

University of Montpellier

C. Delseny

University of Montpellier

Mohammad Kabir

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Omer Nur

University of Gothenburg

A. Salesse

University of Montpellier

Magnus Willander

University of Gothenburg

J. Deen

McMaster University

Fluctuation and Noise Letters

0219-4775 (ISSN)

Vol. 6 1 L45-L55

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