Excess low frequency noise in single-wall carbon nanotube
Artikel i vetenskaplig tidskrift, 2006
Low frequency noise measurements have been performed on a single-wall carbon nanotube connected by Ti/Au electrodes. It has been found that the 1/f noise decreases when the measurements are undertaken under vacuum and when the nanotube is partially degassed, showing a correlation between the fluctuation inducing the 1/f noise and the presence of gases. We show that the 1/f noise sources are located at the metal/nanotube contacts. When the device is annealed under vacuum at 450K, some Lorentzian shapes are observable and can be related to nanotube defects or to strongly bound molecules. © World Scientific Publishing Company.
field-effect transistors
1/f noise
transport
resistance
contact
Författare
S. Soliveres
McMaster University
Université de Montpellier
A. Hoffmann
Université de Montpellier
F. Pascal
Université de Montpellier
C. Delseny
Université de Montpellier
Mohammad Kabir
Chalmers, Mikroteknologi och nanovetenskap, Fasta tillståndets elektronik
Omer Nur
Göteborgs universitet
A. Salesse
Université de Montpellier
Magnus Willander
Göteborgs universitet
J. Deen
McMaster University
Fluctuation and Noise Letters
0219-4775 (ISSN)
Vol. 6 1 L45-L55Ämneskategorier
Matematik
Annan teknik
DOI
10.1142/S0219477506003136