Excitonic effects in ZnO nanowires and hollow nanotubes
Paper in proceedings, 2007

Energy levels and wave functions of ground and excited states of an exciton are calculated by the method of imaginary time. Energy levels as functions of radius of single and double wall nanotube are studied. Asymptotic behavior of energy levels at large and small values of the radius using perturbation theory and adiabatic approximation is considered. Spatially indirect exciton in semiconductor nanowire is also investigated. Experimental result from high quality reproducible ZnO nanowires grown by low temperature chemical engineering is presented. State of the art high brightness white light emitting diodes (HB-LEDs) are demonstrated from the grown ZnO nano-wires. The color temperature and color rendering index (CRI) of the HB-LEDs values was found to be (3250 K, 82), and (14000 K, 93), for the best LEDs, which means that the quality of light is superior to one obtained from GaN LEDs available on the market today. The role of VZn and VO on the emission responsible for the white light band as well as the peak position of this important wide band is thoroughly investigated in a systematic way.

Author

Magnus Willander

University of Gothenburg

Yu. E. Lozovik

Qing Xiang Zhao

Omer Nur

Qiuhong Hu

University of Gothenburg

Peter Klason

University of Gothenburg

Proc. SPIE - Int. Soc. Opt. Eng.

0277-786X (ISSN)

Vol. 6486 648614-1-1-

Subject Categories

Condensed Matter Physics

DOI

10.1117/12.714005

More information

Created

10/10/2017