Nb3Al thin film deposition for low-noise terahertz electronics
Journal article, 2008

Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb3Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830°C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons.

Author

Dimitar Milkov Dochev

Chalmers, Department of Radio and Space Science, Advanced Receiver Development

Alexey Pavolotskiy

Chalmers, Department of Radio and Space Science, Advanced Receiver Development

Victor Belitsky

Chalmers, Department of Radio and Space Science, Advanced Receiver Development

Hans Olofsson

Chalmers, Department of Radio and Space Science, National Facility for Radio Astronomy

Journal of Physics : Conference Series

Vol. 97 1 012072 (6 pp.)-

Subject Categories

Condensed Matter Physics

More information

Created

10/7/2017