Field-effect transistors with thin ZnO as active layer for gas sensor applications
Paper i proceeding, 2007

Zinc oxide based field-effect devices prepared for gas sensing applications are studied. For this purpose, bottom-gate transistors were fabricated using Pd as source and drain interdigitated electrodes with gate lengths varying from 0.3 to 2 mu m. Thin (50 nm) zinc oxide films were grown with the aid of pulsed laser deposition (PLD) at room temperature and served as active and sensing layer. AFM and XRD analysis demonstrated the polycrystalline nature of the c-axis oriented ZnO films with nanoscale grain size (20-40 nm) with relatively high average roughness. Electrical and gas sensing measurements from the above-mentioned devices are presented. (C) 2008 Elsevier B.V. All rights reserved.

zinc oxide

bottom-gate FETs

pulsed laser deposition

gas sensor

Författare

F. V. Farmakis

Institute of Microelectronics, Athens

T. Speliotis

Institute of Materials Science, Athens

K. P. Alexandrou

Institute of Microelectronics, Athens

C. Tsamis

Institute of Microelectronics, Athens

M. Kompitsas

Theoretical and Physical Chemistry

I. Fasaki

Theoretical and Physical Chemistry

Piotr Jedrasik

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Göran Petersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Bengt Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 85 5-6 1035-1038

Ämneskategorier

Fysik

DOI

10.1016/j.mee.2008.01.040