Design and analysis of high-power InP-based heterostructure barrier varactor multipliers
Artikel i vetenskaplig tidskrift, 2008

The heterostructure barrier varactor design method aims at finding optimum epitaxial layer structure and device geometry to improve the diode power handling capability. The nonlinear thermal resistance of the HBV and an empirical expression introducing the leakage current are proposed and added to the electro-thermal HBV model. Finally, the HBV model is used to simulate various devices. (C) 2008 Wiley Periodicals, Inc.

EFFICIENCY

applications

heterostructure barrier varactor

high-power

MODEL

frequency multiplier

Författare

Arezoo Emadi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Microwave and Optical Technology Letters

0895-2477 (ISSN) 1098-2760 (eISSN)

Vol. 50 4 1017-1022

Ämneskategorier

Fysik

DOI

10.1002/mop.23293